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BUK9Y11-30B Datasheet, NXP Semiconductors

BUK9Y11-30B fet equivalent, n-channel trenchmos logic level fet.

BUK9Y11-30B Avg. rating / M : 1.0 rating-14

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BUK9Y11-30B Datasheet

Features and benefits

I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General pur.

Application

I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference d.

Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatibl.

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